PART |
Description |
Maker |
KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23C32005BG |
32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAMA82DL32x4T(ü)32兆位Mx8 Bit/2Mx16位)的CMOS 3.3伏只,同时闪电行 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL32x4T(ü)32兆位Mx8 Bit/2Mx16位)的CMOS 3.3伏只,同时闪电行 Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL32x4T(ü)32兆位4Mx8 Bit/2Mx16位)的CMOS 3.3伏只,同时闪电行
|
AMIC Technology, Corp. AMIC Technology Corporation
|
A82DL32X4T |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only Simultaneous Operation Flash Memory
|
AMIC Technology
|
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
CMS3216LAX-75EX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
KS88C4504 KS88P4504 |
new SAM87RC family of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range of integrated peripherals, and various mas SAM87RC家庭位单芯片CMOS微控制器提供了快速,高效的CPU,一个广泛的集成外设,以及各种马
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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